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N Channel Enhancement Mode MOSFET ST3402 4A DESCRIPTION ST3402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE 30V/2.8A, RDS(ON) = 58m @VGS = 10V 30V/2.3A, RDS(ON) = 65m @VGS = 4.5V 30V/1.5A, RDS(ON) = 105m @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3 D G 1 1.Gate 2.Source S 2 3.Drain PART MARKING SOT-23-3L 3 A2YA 1 Y: Year Code 2 A: Week Code ORDERING INFORMATION Part Number ST3402S23RG Package SOT-23-3L Part Marking A2YA Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ST3402S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb - Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3402 2006. V1 N Channel Enhancement Mode MOSFET ST3402 4A ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=70 TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical 30 12 4.0 2.8 10 1.25 1.25 0.8 150 -55/150 100 Unit V V A A A W /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3402 2006. V1 N Channel Enhancement Mode MOSFET ST3402 4A ELECTRICAL CHARACTERISTICS ( Ta = 25 unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Condition Min Typ Max Unit V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS=0V,ID=-250uA VDS=VGS,ID=250uA VDS=0V,VGS=12V VDS=24V,VGS=0V VDS=24V,VGS=0V TJ=55 VDS4.5V,VGS=4.5V VGS=10V,ID=2.8A VGS=4.5V,ID=4.5A VGS=2.5V,ID=1.5A VDS=4.5V,ID=5.8A IS=1.25A,VGS=0V 30 0.8 1.6 100 1 10 4 48 53 80 65 105 V V nA uA A 58 m S 12 0.8 1.2 V Qg Qgs Qgd Ciss Coss Crss td(on) tr VDS=15V VGS=4.5V ID2.0A VDS=15V VGS=0V F=1MHz VDD=15V RL=10 ID=1.0A VGEN=10V RG=3 4.2 0.6 1.5 350 55 41 2.5 2.5 20 4 6 nC pF nS td(off) tf STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3402 2006. V1 N Channel Enhancement Mode MOSFET ST3402 4A TYPICAL CHARACTERICTICS (25 unless otherwise noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3402 2006. V1 N Channel Enhancement Mode MOSFET ST3402 4A TYPICAL CHARACTERICTICS (25 unless otherwise noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3402 2006. V1 N Channel Enhancement Mode MOSFET ST3402 4A SOT-23-3L PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3402 2006. V1 |
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